Inchange Semiconductor 2SD1239
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1239 |
|---|---|
| Datasheet | 2SD1239 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current Capability●Excellent Safe Operating Area
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching regulators●Power amplifiers . Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 150 V 120 V 6 V 20 A 30 A 3 A 100 W 150 ℃ -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1239
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=...