Datasheet Details
| Part number | 2SD1239 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1239-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor isc Product Specification 2SD1239.
| Part number | 2SD1239 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1239-INCHANGE.pdf |
|
|
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·High Current Capability ·Excellent Safe Operating Area ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Power amplifiers .
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 150 V 120 V 6 V 20 A 30 A 3 A 100 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SD1239 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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