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2SD1238 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.4 1.3 1.2 15.0 20.0 Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. Wide ASO and highly resistant to breakdown. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 5.45 5.45 Specifications ( ) : 2SB922 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Juncti.

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Other Datasheets by SANYO (now Panasonic)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN1429A 2SB922 / 2SD1238 PNP / NPN Epitaxial Planar Silicon Transistors www.DataSheet4U.com 2SB922 / 2SD1238 Large Current Switching Applications Applications • Package Dimensions unit : mm 2022A [2SB922 / 2SD1238] 3.5 15.6 14.0 2.6 3.2 4.8 2.0 Large current switching of relay drivers, high-speed inverters, converters. Features • • 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.4 1.3 1.2 15.0 20.0 Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. Wide ASO and highly resistant to breakdown. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 5.45 5.