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SavantIC
SavantIC

2SD2066 Datasheet Preview

2SD2066 Datasheet

SILICON POWER TRANSISTOR

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2SD2066 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2066
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·Wide area of safe operation
·Complement to type 2SB1373
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
160
160
5
12
2.5
120
150
-55~150
UNIT
V
V
V
A
W



SavantIC
SavantIC

2SD2066 Datasheet Preview

2SD2066 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SD2066 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2066
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A
VBE Base-emitter on voltage
IC=8A;VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V
COB Collector output capacitance
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
160 V
2.0 V
1.8 V
50 µA
50 µA
20
60 200
15
20 MHz
210 pF
hFE-2 Classifications
QP
60-120
100-200
2


Part Number 2SD2066
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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2SD2066 pdf
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