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2SD2066 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE High transition frequency(fT) Wide area of satety operation Complement to Type 2SB1373 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2066 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High transition frequency(fT) ·Wide area of satety operation ·Complement to Type 2SB1373 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and general purpose applications.