2SD2066 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·High transition frequency(fT) ·Wide area of satety operation ·plement to Type 2SB1373 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier and general purpose applications. IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;.