Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
- Good Linearity of hFE
- High transition frequency(fT)
- Wide area of satety operation
- plement to Type 2SB1373
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier and general purpose...
