Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
- Collector Power Dissipation-
: PC= 25W@ TC= 25℃
- Low Collector Saturation Voltage-
: VCE(sat)= 1.7V(Max)@ (IC= 3A, IB= 0.3A)
- plement to Type 2SB1368
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose...
