| Part number | 2SD2061 |
|---|---|
| Download | 2SD2061 Datasheet (PDF) |
| File Size | 191.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
SeCoS Halbleitertechnologie GmbH |
2SD2061 | Transistor |
Galaxy Microelectronics |
2SD2061 | Power Transistor |
Jiangsu Changjiang Electronics |
2SD2061 | Transistor |
SavantIC |
2SD2061 | SILICON POWER TRANSISTOR |
·Low Collector Saturation Voltage : VCE(sat)= 0.3V(TYP.) @ IC= 2A ·Collector Power Dissipation : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2061 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
