Datasheet Details
| Part number | 2SD2061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2061-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2061 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2061-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage : VCE(sat)= 0.3V(TYP.) @ IC= 2A ·Collector Power Dissipation : PC = 30W (Max) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 30 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2061 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2061 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA ;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2061 | Transistor | SeCoS |
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2SD2061 | Power Transistor | GME |
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2SD2061 | Transistor | Jiangsu Changjiang Electronics |
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2SD2061 | SILICON POWER TRANSISTOR | SavantIC |
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