SeCoS Halbleitertechnologie GmbH 2SD2061
Transistor
| Part No. | 2SD2061 |
|---|---|
| Datasheet | 2SD2061 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Transistor |
| Buy | Stock & Price |
FEATURES
Low saturation voltage Excellent DC current gain characteristic TO-220JABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage Emitter to Base Voltage VCEO VEBO Continuous Collector Current Collector Power Dissipation Junction and Storage Temperature IC PC TJ, TSTG REF. A B C D E F G H Millimeter Min. Max. 9.57 10.57 3.54 4.14 2.54 2.94 11.86 13.26 0.97 1.57 0.51 1.11 12.7 13.8 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.68 5.48 2.95 3.96 4.27 4.87 1.07 1.47 8.0 10.0 2.03 2.92 0.30 0.65 Rating 80 60 5 3 2 150, -55~150 Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector to Base Breakdown Voltage V(BR)CBO 80 - - Collector to Emitter Break