2SD2061 - Power Transistor

Galaxy Microelectronics

Key Features

z Low saturation voltage, typically VCE(sat)=0.3V at IC/IB=2A/0.2A Pb z Excellent DC current gain characteristics. Lead-free z Pc=30W. ( TC=25℃) Production specification 2SD2061 ITO-220AB.

2SD2061 power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SD2061
Manufacturer	Galaxy Microelectronics
File Size	89.41 KB
Description	Power Transistor
Datasheet	2SD2061 Datasheet

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Power Transistor(60V,3A ) FEATURES z Low saturation voltage, typically VCE(sat)=0.3V at IC/IB=2A/0.2A Pb z Excellent DC current gain characteristics. Lead-free z Pc=30W.( TC=25℃) Production specification 2SD2061 ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation DC Pulse Ta=25℃ TC=25℃ Junction and Storage Temperature 60 V 5V 3 A 6 2 W 30 -55 to +150 ℃ S047 Rev.A www.gmicroelec.com 1 Production specification Power Transistor(60V,3A ) 2SD2061 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.