Overview: Transistor 2SD2067 (Tentative)
Silicon NPN epitaxial planer type
6.9±0.1 1.05 2.5±0.1 ±0.05 Unit: mm (1.45) 0.8
0.5 4.5±0.1 For low-frequency output amplification 0.15 0.7 4.0 q q q q q Darlington connection. High foward current transfer ratio hFE. Large peak collector current ICP. High collector to emitter voltage VCEO. Allowing supply with the radial taping. 0.45–0.05
0.45–0.05
+0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
* (Ta=25˚C)
Ratings 120 100 5 3 2 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max.
0.1 0.45+ – 0.05 2.5±0.1 (HW type) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Internal Connection
C B ≈200Ω E s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage
*1h FE (Ta=25˚C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE
*1 Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = IC = 1A, IB = 1A*2 IC = 1A, IB = 1mA*2 1mA*2 min typ max 0.1 1 120 100 5 4000 40000 1.5 2
*2 14.5±0.
