2SD2064
Key Features
- 0±0.3 11.0±0.2
- 0±0.2 3.2
- 0±0.5 15.0±0.2 φ3.2±0.1
- 0±0.2
- 0±0.1 0.6±0.2
- 1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 120V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 80 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
- h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC - Ta 80 2SD2064 IC - VCE 12 TC=25˚C 10 10 12 VCE=5V IC - VBE Collector power dissipation PC (W)
