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SavantIC

BU931 Datasheet Preview

BU931 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU931
DESCRIPTION
www.data·sWheietht4uT.cOom-3 package
·High voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions.
·High voltage ignition coil driver
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
IBM Base current (peak)
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
500
400
5
15
30
1
5
175
-65~200
-65~200
UNIT
V
V
V
A
A
A
A
W
MAX
1.0
UNIT
/W




SavantIC

BU931 Datasheet Preview

BU931 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU931
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=10mH
VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=70mA
VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=100mA
VCEsat-3 Collector-emitter saturation voltage IC=10 A;IB=250mA
VBEsat-1 Base-emitter saturation voltage
IC=7A;IB=70mA
VBEsat-2 Base-emitter saturation voltage
IC=8 A;IB=100mA
VBEsat-3 Base-emitter saturation voltage
ICES Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
VF Diode forward voltage
IC=10A;IB=250mA
VCE=500V;VBE=0
Tj=125
VCE=450V;IB=0
Tj=125
VEB=5V; IC=0
IC=5A ; VCE=10V
IF=10A
MIN TYP. MAX UNIT
400 V
1.6 V
1.8 V
1.8 V
2.2 V
2.4 V
2.5 V
0.1
0.5
mA
0.1
0.5
mA
20 mA
300
2.5 V
2


Part Number BU931
Description SILICON POWER TRANSISTOR
Maker SavantIC
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