SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU931
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=10mH
VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=70mA
VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=100mA
VCEsat-3 Collector-emitter saturation voltage IC=10 A;IB=250mA
VBEsat-1 Base-emitter saturation voltage
IC=7A;IB=70mA
VBEsat-2 Base-emitter saturation voltage
IC=8 A;IB=100mA
VBEsat-3 Base-emitter saturation voltage
ICES Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
VF Diode forward voltage
IC=10A;IB=250mA
VCE=500V;VBE=0
Tj=125
VCE=450V;IB=0
Tj=125
VEB=5V; IC=0
IC=5A ; VCE=10V
IF=10A
MIN TYP. MAX UNIT
400 V
1.6 V
1.8 V
1.8 V
2.2 V
2.4 V
2.5 V
0.1
0.5
mA
0.1
0.5
mA
20 mA
300
2.5 V
2
