Datasheet4U Logo Datasheet4U.com

BU931 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 15 ICM Collector Current-peak 30 IB Base Current 1 IBM Base Current-peak 5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BU931 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU931 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat)-1 V CE(sat)-2 V CE(sat)-3 Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Sustaining IC= 50MA;

IB= 0;

Saturation IC= 7A;

BU931 Distributor