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BU931ZPFI Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 20 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 60 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W BU931ZPFI isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BU931ZPFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7 A;

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