SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV21
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High DC current gain@IC=12A
·Fast switching times
·Low collector saturation voltage
APPLICATIONS
·Designed for high current,high speed
and high power applications.
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
250
200
7
40
50
8
150
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
0.7
UNIT
/W
