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BUV21 Datasheet SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Datasheet Details

Part number BUV21
Manufacturer SavantIC
File Size 147.24 KB
Description SILICON POWER TRANSISTOR
Download BUV21 Download (PDF)

General Description

·With TO-3 package ·High DC current gain@IC=12A ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power applications.

PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 40 50 8 150 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;

IB=0;L=25mH IE=50mA;

Overview

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV21 www.datasheet4u.