SavantIC BUV23
SILICON POWER TRANSISTOR
BUV23 Specifications
- Max Collector Current : 30A
- Terminals : 2
- Collector Emitter Voltage : 325V
- Collector Emitter Saturation Voltage : 1V
- Fall Time : 400ns
- Max Power Dissipation : 250W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | BUV23 |
|---|---|
| Datasheet | BUV23 Download |
| Manufacturer |  SavantIC |
| Description | SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 package●High DC current gain
●Very fast switching times
●Low collector saturation voltage
APPLICATIONS
●Designed for high current,high speed and high power application. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbolDESCRIPTION
Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 400 325 7 30 40 6 250 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Col...
