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BUV23 - NPN Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 8A High Switching Speed High DC Current Gain- : hFE= 15(Min.) @IC= 8A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high p

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isc Silicon NPN Power Transistor BUV23 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 8A ·High Switching Speed ·High DC Current Gain- : hFE= 15(Min.) @IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.