| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
BUV20 | NPN Transistor |
onsemi |
BUV20 | NPN Silicon Power Transistor |
STMicroelectronics |
BUV20 | HIGH CURRENT NPN SILICON TRANSISTOR |
Seme LAB |
BUV20 | NPN MULTI - EPITAXIAL POWER TRANSISTOR |
TT Electronics |
BUV20 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.
