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BUV20 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A High DC Current Gain- : hFE= 20(Min.)@ IC= 25A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high current, high

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 25A ·High DC Current Gain- : hFE= 20(Min.)@ IC= 25A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current, high power applications.