Seme LAB BUV20
NPN MULTI - EPITAXIAL POWER TRANSISTOR
MECHANICAL DATA
Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max.FEATURES
● HIGH CURRENT● FAST SWITCHING
● HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
APPLICATIONS
TO–3 PIN 1 — Base PIN 2 — Emitter Case is Collector.● Industrial Equipment
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCER VCEX VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (RBE = 100W) Collector – Emitter Voltage (VBE = -1.5V) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector Current (tp = 10 ms) Base Current Total Power Dissipation at Tcase £ 25°C Storage Temperature Junction Temperature 160V 150V 160V 125V 7V 50A 60A 10A 250W –65 to 200°C 200°C Semelab plc.