onsemi BUV20
NPN Silicon Power Transistor
| Part No. | BUV20 |
|---|---|
| Datasheet | BUV20 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Power Transistor |
| Buy | Stock & Price |
BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications.
● High DC current gain: hFE min = 20 at IC = 25 A = 10 at IC = 50 A
● Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A
● Very fast switching times: TF = 0.25 μs at IC = 50 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emititer Voltage Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = −1.5 V) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 100 Ω) Collector−Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
● High DC current gain: hFE min = 20 at IC = 25 A = 10 at IC = 50 A
● Low VCE(sat): VCE(sat) max. = 0.6 V at IC = 25 A = 0.9 V at IC = 50 A
● Very fast switching times: TF = 0.25 μs at IC = 50 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emititer Voltage Collector−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = −1.5 V) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 100 Ω) Collector−Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
