STMicroelectronics BUV20
The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.| Part No. | BUV20 |
|---|---|
| Datasheet | BUV20 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH CURRENT NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s SWITCHING REGULATORS s 1 2 TO-3 (version "S")DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CER V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Junction Temperature Value 160 150 160 125 7 50 60 10 250 -65 to 200 200 Unit V V V V V A A A W o o C C January 2000 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 160 V V CE = 160 V V CE = 100 V V EB = 5 V I C = 200 mA L = 25 mH 125 T case = 125 o C Min.
