Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.)@IC= 6A
- High Power Dissipation
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in power switching applications in military and industrial...
