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BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
• These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage (VBE = −1.
BUV21 Datasheet
