BUV21
BUV21 is manufactured by onsemi.
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features
- High DC Current Gain: hFE min = 20 at IC = 12 A
- Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A
- Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
- These are Pb- Free Devices-
MAXIMUM RATINGS Rating
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector- Emitter Voltage (VBE =
- 1.5 V) Collector- Emitter Voltage (RBE = 100 W) Collector- Current
- Continuous
- Peak (PW v 10 ms)
Base- Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range
Symbol VCEO(SUS)
VCBO VEBO VCEX...
