BUV21 Datasheet

The BUV21 is a NPN Silicon Power Transistor.

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Part NumberBUV21
Manufactureronsemi
Overview BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low V.
* High DC Current Gain: hFE min = 20 at IC = 12 A
* Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A
* Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A
* These are Pb
*Free Devices* MAXIMUM RATINGS Rating Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector
*Emitter Vo.
Part NumberBUV21
Description40 AMPERES NPN SILICON POWER METAL TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV21/D BUV21 SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. • Hig. ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ.
Part NumberBUV21
DescriptionNPN Silicon Low Frequency High Power Switching Transistor
ManufacturerUnknown Manufacturer
Overview BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Swi. 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, .
Part NumberBUV21
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3 package ·High DC current gain@IC=12A ·Fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power applications. PINNING(see fig.. Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC curr.