BUV21G
BUV21G is manufactured by onsemi.
BUV21
SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features
- High DC Current Gain: hFE min = 20 at IC = 12 A
- Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A
- Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
- These are Pb- Free Devices-
MAXIMUM RATINGS
Rating
Symbol
Value
Collector- Emitter Voltage
VCEO(SUS)
Collector- Base Voltage
VCBO
Emitter- Base Voltage
VEBO
Collector- Emitter Voltage (VBE =
- 1.5 V)
VCEX
Collector- Emitter Voltage (RBE = 100 W)
VCER
Collector- Current
- Continuous
- Peak (PW v 10 ms)
Base- Current Continuous
Total Device...
