BUV21G - NPN Silicon Power Transistor

onsemi

Download the BUV21G datasheet PDF. This datasheet also covers the BUV21 variant, as both devices belong to the same npn silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

High DC Current Gain: hFE min = 20 at IC = 12 A.
Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A.
Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A.
These are Pb.
Free Devices.

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BUV21G npn silicon power transistor by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BUV21_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BUV21G
Manufacturer	onsemi
File Size	108.83 KB
Description	NPN Silicon Power Transistor
Datasheet	BUV21G Datasheet

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Other Datasheets by onsemi

Part Number	Description
BUV21	NPN Silicon Power Transistor
BUV20	NPN Silicon Power Transistor
BUV22	SITCHMODE Series NPN Silicon Power Transistor
BUV26	NPN Silicon Power Transistor
BUV27	NPN Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Collector−Emitter Voltage VCEO(SUS) 200 Collector−Base Voltage VCBO 250 Emitter−Base Voltage VEBO 7 Collector−Emitter Voltage (VBE = −1.