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BUV22 SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features http://onsemi.com
• High DC Current Gain: • Low VCE(sat), VCE(sat)
hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS
• Very Fast Switching Times:
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage
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Symbol VCEO(SUS) VCBO VEBO VCEX VCER IC ICM IB PD TJ, Tstg
Value 250 300 7 300 290 40 50 8 250 −65 to 200
Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C BUV22G AYWW MEX TO−204AE (TO−3) CASE 197A
Collector−Emitter Voltage (VBE = −1.
BUV22 Datasheet
