BUV22 Datasheet and Specifications PDF

The BUV22 is a SITCHMODE Series NPN Silicon Power Transistor.

Key Specifications

PackageTO-3
Mount TypeThrough Hole
Pins2
Max Frequency8 MHz
Height8.51 mm
Max Operating Temp200 °C
Min Operating Temp-65 °C
Part NumberBUV22 Datasheet
Manufactureronsemi
Overview BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features • High DC Current Gain: • Low VCE(sat),.
* High DC Current Gain:
* Low VCE(sat), VCE(sat) hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS
* 250 WATTS
* Very Fast Switching Times:
* Pb
*Free Package is Available* MAXIMUM RATINGS Rat.
Part NumberBUV22 Datasheet
Description40 AMPERES NPN SILICON POWER METAL TRANSISTOR
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUV22/D BUV22 SWITCHMODE Series NPN Silicon Power Transistor . . . designed for high current, high speed, high power applications. • Hig. ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î.
Part NumberBUV22 Datasheet
DescriptionNPN Silicon Low Frequency High Power Switching Transistor
ManufacturerUnknown Manufacturer
Overview BUV20,BUV21,BUV22,BUV23,BUV24 NPN Silicon Low Frequency High Power Switching Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Swi. 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, .
Part NumberBUV22 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 10A APPLICATIONS ·Designed for high current, high speed, high pow. .

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