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BUV22 Datasheet PDF

Unknown Manufacturer BUV22

NPN Silicon Low Frequency High Power Switching Transistor

BUV22 Specifications

  • Package : TO-3
  • Mount Type : Through Hole
  • Polarity : NPN
  • Current Rating : 40A
  • Terminals : 2
  • Collector Base Voltage : 300V
  • Collector Emitter Voltage : 250V
  • Emitter Base Voltage : 7V
  • Collector Emitter Saturation Voltage : 1.5V
  • Gain Bandwidth : 8MHz
  • Max Power Dissipation : 250W
  • Max Operating Temp : 200°C
  • Min Operating Temp : -65°C
Source: Octopart
Part No. BUV22
Datasheet BUV22 Download
Manufacturer Unknown Manufacturer
Description NPN Silicon Low Frequency High Power Switching Transistor
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BUV22 datasheet page 1 preview

FEATURES

: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Good Switching Characteristic. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: (Ta = 25°C ) Parameter name Total Dissipation (Tc=25°C) Symbols Unit Ptot W BUV20 BUV21 Specifications BUV22 250 BUV23 BUV24 Max. Collector Current ICM A 50 40 40 30 20 Junction Temperature Tjm °C 175 Collector-Base Breakdown V(BR)CBO V Voltage ≥160 ≥250 ≥300 ≥400 ≥450 Collector-Emitter Breakdown V(BR)CEO V Voltage Emitter-Base Breakdown Voltage V(BR)EBO V ≥125 ≥200 ≥250 IC=10mA ≥7 IE=1mA ≥325 ≥400 Collector- Emitter IC= VCE(sat) V ≤1.2 50A ≤1.5 25A ≤1.5 20A ≤0.8 8A ≤0.6 6A Saturation Voltage Drop IB= 5A