onsemi BUV22
SITCHMODE Series NPN Silicon Power Transistor
| Part No. | BUV22 |
|---|---|
| Datasheet | BUV22 Download |
| Manufacturer |  onsemi |
| Description | SITCHMODE Series NPN Silicon Power Transistor |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain:● Low VCE(sat), VCE(sat) hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS
● Very Fast Switching Times:
● Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Symbol VCEO(SUS) VCBO VEBO VCEX VCER IC ICM IB PD TJ, Tstg Value 250 300 7 300 290 40 50 8 250 −65 to 200 Unit Vdc Vdc Vdc Vdc Vdc Adc Apk Adc W _C BUV22G AYWW MEX TO−204AE (TO−3) CASE 197A Collector−Emitter Voltage (VBE = −1.5 V) Collector−Emitter Voltage (RBE = 100 W) Collector−Current − Continuous − Peak (PW v 10 ms) Base−Current Continuous Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol qJC Max 0.7 Unit _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
