Inchange Semiconductor BUV22
Silicon NPN Power Transistor
| Part No. | BUV22 |
|---|---|
| Datasheet | BUV22 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 10A●High Switching Speed
●High DC Current Gain- : hFE= 20(Min.) @IC= 10A
APPLICATIONS
●Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 290 V 300 V 250 V 7V 40 A 50 A 8A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website： 1 INCHANGE Semiconductor isc Silicon NPN Po