BUV27 - NPN Silicon Power Transistor

onsemi

Key Features

Low Collection Emitter Saturation Voltage.
Fast Switching Speed.
These Devices are Pb.
Free and are RoHS Compliant.

BUV27 npn silicon power transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	BUV27
Manufacturer	onsemi
File Size	84.84 KB
Description	NPN Silicon Power Transistor
Datasheet	BUV27 Datasheet

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BUV20	NPN Silicon Power Transistor
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BUV26	NPN Silicon Power Transistor

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BUV27 NPN Silicon Power Transistor This device is designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current Total Device Dissipation (TC = 25°C) Derate above 25°C VCEO VCBO VEBO IC ICM IB PD 120 Vdc 240 Vdc 7.0 Vdc 12 Adc 20 Adc 4.0 Adc 70 W 0.56 W/°C Operating and Storage Temperature TJ, Tstg − 65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.