| Part Number | BUV23 |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview | NPN BUV23 POWER SWITCH APPLICATIONS The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are intended for use in power switching appications in military and industrial equipme. lector Cutoff Current Collector Cutoff Current Test Condition(s) IC=200 mA, L= 25mH IC=0A , IE=50 mA VCE=260 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125°C Min Typ Mx Unit 325 7 3 3 12 1/2 Datasheet pdf - http://www.DataSheet4U.co.kr/ V V mA mA COMSET SEMICONDUCTORS NPN . |
BUV23 Datasheet
The BUV23 is a POWER SWITCH APPLICATIONS.
| Part Number | BUV23 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Part Number | BUV23 |
|---|---|
| Description | Bipolar NPN Device |
| Manufacturer | Seme LAB |
| Overview | BUV23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.. ors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Generated 1-Aug-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ . |
| Part Number | BUV23 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·High DC current gain ·Very fast switching times ·Low collector saturation voltage APPLICATIONS ·Designed for high current,high speed and high power application. PINNING(see fig.2) . 25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current. |