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SavantIC

BUV47 Datasheet Preview

BUV47 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV47 BUV47B
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package.
·High voltage.
·Very high switching speed.
APPLICATIONS
·Suited for 220V switchmode power supply,
DC and AC motor control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
PC
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
850
400
7
9
15
3
90
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
MAX
1.38
UNIT
/W




SavantIC

BUV47 Datasheet Preview

BUV47 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV47 BUV47B
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH
VCEsat-1
Collector-emitter
saturation voltage
BUV47 IC=5A; IB=1A
BUV47B IC=6A; IB=1.2A
VCEsat-2
Collector-emitter
saturation voltage
BUV47 IC=8A; IB=2.5A
BUV47B IC=9A; IB=3A
VBEsat
Base-emitter
saturation voltage
BUV47 IC=5A; IB=1A
BUV47B IC=6A; IB=1.2A
ICEX Collector cut-off current
VCE=850V ;VBE=-2.5V
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=10A ; VCE=5V
Switching times :
ton Turn-on time
ts Storage time
tf Fall time
IC=5A IB1=- IB2=1.0A
VCC=150V
MIN TYP. MAX UNIT
10 V
400 V
1.5 V
3.0 V
1.6 V
0.15 mA
1.0 mA
7 10 14
1.0 µs
3.0 µs
0.8 µs
2


Part Number BUV47
Description SILICON POWER TRANSISTOR
Maker SavantIC
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