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SavantIC

BUW13 Datasheet Preview

BUW13 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW13 BUW13A
DESCRIPTION
·With TO-3PN package
www.dat·aHshigeeht4vuo.clotamge,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BUW13
BUW13A
Open emitter
VCEO
Collector-emitter voltage
BUW13
BUW13A
Open base
VEBO
IC
ICM
IB
IBM
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
850
1000
400
450
9
15
30
6
9
175
150
-65~175
UNIT
V
V
V
A
A
A
A
W




SavantIC

BUW13 Datasheet Preview

BUW13 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW13
BUW13A
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW13 IC=10A; IB=2A
BUW13A IC=8A; IB=1.6A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW13 IC=10A; IB=2A
BUW13A IC=8A; IB=1.6A
Collector cut-off current
VCE=Rated VCES; VBE=0
TC=125
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
For BUW13
IC=10A ;IB1=-IB2=2A
For BUW13A
IC=8A ;IB1=-IB2=1.6A
Product Specification
BUW13 BUW13A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.6 V
1.0
4.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2


Part Number BUW13
Description SILICON POWER TRANSISTOR
Maker SavantIC
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