Datasheet Details
| Part number | BUW131 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.33 KB |
| Description | NPN Transistor |
| Datasheet | BUW131-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | BUW131 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.33 KB |
| Description | NPN Transistor |
| Datasheet | BUW131-INCHANGE.pdf |
|
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High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUW131 850 VCES Collector- Emitter Voltage(VBE= 0) V BUW131A 1000 BUW131 450 VCEO Collector-Emitter Voltage V BUW131A 500 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 6 V 8 A 16 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W BUW131/A · isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW131 BUW131A IC= 50mA ;
| Part Number | Description |
|---|---|
| BUW131A | NPN Transistor |
| BUW131H | NPN Transistor |
| BUW13 | NPN Transistor |
| BUW132 | NPN Transistor |
| BUW132A | NPN Transistor |
| BUW132H | NPN Transistor |
| BUW133 | NPN Transistor |
| BUW133A | NPN Transistor |
| BUW133H | NPN Transistor |
| BUW13A | NPN Transistor |