BUW133H Description
· High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 430V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW133H TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...