BUW133A
BUW133A is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Switching Speed
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 500V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in very fast switching applications in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCES VCEO
Collector- Emitter Voltage (VBE= 0)
Collector-Emitter Voltage
1000 500
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
UNIT V V V A A A A W ℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc website：.iscsemi....
