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Savantic

2SB1151 Datasheet Preview

2SB1151 Datasheet

Silicon PNP Power Transistors

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SavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1691
·Low saturation voltage
·Large current
·High total power dissipation:PT=1.3W
·Large current capability and wide SOA
APPLICATIONS
·DC-DC converter
·Driver of solenoid or motor
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1151
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-60
-7
-5
-8
-1
1.3
20
150
-55~150
UNIT
V
V
V
A
A
A
W




Savantic

2SB1151 Datasheet Preview

2SB1151 Datasheet

Silicon PNP Power Transistors

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A
VBEsat
Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A
ICBO Collector cut-off current
VCB=-50V; IE=0
IEBO Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-1V
hFE-2
DC current gain
IC=-2A ; VCE=-1V
hFE-3
DC current gain
IC=-5A ; VCE=-2V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-2A; IB1=-IB2=-0.2A
RL=5.0@;VCCA10V
hFE-2 Classifications
ML K
100-200 160-320 200-400
Product Specification
2SB1151
MIN TYP. MAX UNIT
-0.3 V
-1.2 V
-10 µA
-10 µA
60
100 400
50
0.15 1.0
0.78 2.5
0.18 1.0
µs
µs
µs
2


Part Number 2SB1151
Description Silicon PNP Power Transistors
Maker Savantic
Total Page 4 Pages
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