2N4401 Datasheet | SeCoS Halbleitertechnologie GmbH

Features 4.55±0.2 3 . 5 ±0. 2 4.5±0.2 Power Dissipation MAXIMUM RATINGS- TA=25 o C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6V IC Collector Current -Continuous 600 m A PC- TJ Collector Power dissipation Junction Temperature 0.625 150 W o C Tstg Storage Temperature -55to +150 o C RθJA Thermal Resistance, junction to Ambient 357 o C /m W 14.3±0.2 0 .4 6 +- 00..11 0 . 4 3 +- 00.. 0078 (1.27 Typ.) 123 1.25+- 00..22 2.54±0.1 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS ( Tamb=25o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation...