2N4403 Datasheet | SeCoS Halbleitertechnologie GmbH

FEATURES Power Dissipation 4.55±0.2 3 . 5 ±0. 2 4.5±0.2 MAXIMUM RATINGS- TA=25o C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 V -5 V IC Collector Current -Continuous -600 m A - Collector Power dissipation TJ Tstg RθJA Junction Temperature Storage Temperature Thermal Resistance, junction to Ambient 150 -55to +150 357 o C o C o C /m W 14.3±0.2 0 .4 6 +- 00..11 0 . 4 3 +- 00.. 0078 (1.27 Typ.) 123 1.25+- 00..22 2.54±0.1 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS (Tamb=25o C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector capacitance Delay time Rise time Storage time Fall time Symbol Test conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE(1) h FE(2) h FE(3) h FE(4) h FE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 f T Cob td tr t S tf IC=-100µA,IE=0 IC=-1m A,IB=0 IE=-100µA,IC=0 VCB=-35V,IE=0 VEB=-5V,IC=0 VCE=-1V,IC=-0.1m A VCE=-1V,IC=-1m A VCE=-1V,IC=-10m A VCE=-1V,IC=-150m A VCE=-2V,IC=-500m A IC=-150m A,IB=-15m A IC=-500m A,IB=-50m A IC=-150m A,IB=-15m A IC=-500m A,IB=-50m A VCE=-10V,IC=-20m A,f=100MHz VCB=-10V,IE=0,f=100KHz...