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SeCoS

2N7002T Datasheet Preview

2N7002T Datasheet

Small Signal MOSFET

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Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–523
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
Symbol
VDSS
VDGR
Value
60
60
Unit
Vdc
Vdc
VGS
VGSM
±ā20
±ā40
Vdc
Vpk
N–Channel
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max Unit
PD 150 mW
1.8 mW/°C
RθJA
TJ, Tstg
833
ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.600 0.900
D 0.150 0.300
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.100 0.300
L 0.400 0.600
S 1.450 1.750
V 0.250 0.350
All Dimension in mm
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
A
L
3
BS
12
VG
C
DH
2
3
12
2
SOT–523
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
72
12
Gate Source
72 = Device Code
KJ
Any changing of specification will not be informed individual
Page 1 of 3




SeCoS

2N7002T Datasheet Preview

2N7002T Datasheet

Small Signal MOSFET

No Preview Available !

Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
Forward Transconductance
(VDS = 10 V, ID = 200 mAdc)
VGS(th)
ID(on)
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 3205 Vdc, ID ^ 2500 mAdc,
RG = 25 , RL = 150 , Vgen = 10 V)
Ciss
Coss
Crss
td(on)
td(off)
Min
60
1.0
0.5
80
Typ Max Unit
– – Vdc
– 1.0 µAdc
– 500
– 10 nAdc
– –10 nAdc
– 2.0 Vdc
1 –A
Ohms
13.5
– 7.5
– – ms
– 50 pF
– 25 pF
– 5.0 pF
– 20 ns
– 20 ns
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3


Part Number 2N7002T
Description Small Signal MOSFET
Maker SeCoS
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2N7002T Datasheet PDF






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