Elektronische Bauelemente
2SB1151
-5 A , -60 V
P P Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low Collector-Emitter Saturation Voltage
Large Collector Current
High Power Dissipation
TO-126
ORDER INFORMATION
Part Number
Type
2SB1151-Y
Lead (Pb)-free
A
E
F
N
L
M
K
B
H
J
C
D
2SB1151-Y-C Lead (Pb)-free and Halogen-free
Collector
2
3
Base
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Emitter
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
Parameter
Symbol
Ratings
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-60
-7
V
V
Collector Current-Continuous
IC
-5 A
Collector Power Dissipation
PC 1.25 W
Maximum Junction to Ambient
Junction, Storage Temperature
RθJA
TJ, TSTG
100
-55~150
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown voltage
V(BR)CBO
V(BR)CEO
-60
-60
-
-
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
ICBO
IEBO
-7
-
-
-
-
-
DC Current Gain
hFE(1)
hFE(2)
160
60
-
-
Collector-Emitter Saturation Voltage
hFE(3)
VCE(sat)
50
-
-
-
Base-Emitter Saturation Voltage
VBE(sat)
-
-
http://www.SeCoSGmbH.com/
11-Oct-2017 Rev. A
Max.
-
-
-
-10
-10
320
-
-
-0.3
-1.2
Unit
V
V
V
µA
µA
V
V
Test Conditions
IC= -100µA, IE=0
IC= -1mA, IB=0
IC=0, IE= -100µA
VCB= -50V, IE=0
VEB= -7V, IC=0
VCE= -1V, IC= -2A
VCE= -1V, IC= -0.1A
VCE= -2V, IC= -5A
IC= -2A, IB = -0.2A
IC= -2A, IB = -0.2A
Any changes of specification will not be informed individually.
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