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2SB772 - Plastic Encapsulate Transistors

Key Features

  • Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o.

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Full PDF Text Transcription for 2SB772 (Reference)

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2SB772 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors Features * Power Dissipati...

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ee PNP Type Plastic Encapsulate Transistors Features * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Value -40 -30 -6 -3 0.625 150 -55~150 Units V V V A W o 14.3±0.2 0.46+0.1 –0.1 (1.27 Typ. ) 1 2 3 1.25–0.2 +0.2 0.43+0.08 –0.07 C C o 1: Emitter 2: Collector 3: Base 2.54±0.