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2SB772 - PNP Silicon Power Transistor

Key Features

  • Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Power dissipation TA = 25 TC = 25 Junction temperature Storage temperature range.
  • PW 350ìS,duty cycle 2%. Tj Tstg Symbol VCBO VCEO VEBO IC Pc Rating -40 -30 -5 -3 1.0 10 150 -55 to +150 Unit V V V A W W Electrical Characteris.

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SMD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Power dissipation TA = 25 TC = 25 Junction temperature Storage temperature range * PW 350ìS,duty cycle 2%. Tj Tstg Symbol VCBO VCEO VEBO IC Pc Rating -40 -30 -5 -3 1.