FEATURES
Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Power dissipation TA = 25 TC = 25 Junction temperature Storage temperature range * PW 350ìS,duty cycle 2%. Tj Tstg Symbol VCBO VCEO VEBO IC Pc Rating -40 -30 -5 -3 1.0 10 150 -55 to +150 Unit V V V A W W ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Output capacitance Transition frequency * Pulsed: PW 350 s, duty cycle 2% Symbol VCBO VCEO VEBO ICBO IEBO hFE Testconditons Ic=-100 A,IE=0 IC= -10 mA , IB=0 IE= -100 A IC=0 Min -40 -30 -5 -1.0 -1.0 60 160 -0.3 -1.0 55 80 400 -0.5 -2.0 V V pF MHz Typ Max...