SeCoS Halbleitertechnologie GmbH 2SB772
Plastic Encapsulate Transistors
| Part No. | 2SB772 |
|---|---|
| Datasheet | 2SB772 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Plastic Encapsulate Transistors |
| Buy | Stock & Price |
FEATURES
* Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 oMAXIMUM RATINGS
* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Value -40 -30 -6 -3 0.625 150 -55~150 Units V V V A W o 14.3±0.2 0.46+0.1 –0.1 (1.27 Typ. ) 1 2 3 1.25–0.2 +0.2 0.43+0.08 –0.07 C C o 1: Emitter 2: Collector 3: Base 2.54±0.1ELECTRICAL CHARACTERISTICS
（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1） hFE（2） VCE(sat) VBE(sat) unless Test otherwise specified） TYP MAX UNIT V V V -1 -10 -1 60 32 -0.5...