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BC328 Datasheet Preview

BC328 Datasheet

PNP General PurposeTransistor

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Elektronische Bauelemente
BC327/BC328
PNP General PurposeTransistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM : 0.625 W Tamb=25
Collector current
ICM : -0.8
Collector-base voltage
A
V(BR)CBO : BC327 -50 V
BC328 -30
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1
23
1 23
1. COLLECTOR
2. BASE
3 . EMITTER
.
ELECTRICAL CHARACTERISTICS (Tamb=25Я unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
BC327
BC328
Collector-emitter breakdown voltage
BC327
BC328
VCBO
VCEO
Ic= -100µA , IE=0
IC= -10 mA , IB=0
-50
-30
-45
-25
V
V
V
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC327
BC328
BC327
BC328
Emitter cut-off current
VEBO
ICBO
ICEO
IEBO
IE= -10µA, IC=0
VCB= -45V, IE=0
VCB= -25V, IE=0
VCE= -40V, IB=0
VCE= -20 V, IB=0
VEB= -4 V, IC=0
-5
V
-0.1 µA
-0.1 µA
-0.2 µA
-0.2 µA
-0.1 µA
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC= -100mA
VCE=-1V, IC= -300mA
100
40
630
Collector-emitter saturation voltage
VCE(sat)
IC=-500 mA, IB= -50 mA
-0.7 V
Base-emitter saturation voltage
Transition frequency
hFE CLASSIFICATION
Classification
hFE1
hFE2
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
VBE(sat)
fT
IC= -500 mA, IB=-50 mA
VCE= -5V, IC= -10mA
f = 100MHz
260
-1.2 V
MHz
16
100-250
60-
25 40
160-400
250-630
100-
170-
Any changing of specification will not be informed individual
Page 1 of 3




SeCoS

BC328 Datasheet Preview

BC328 Datasheet

PNP General PurposeTransistor

No Preview Available !

Elektronische Bauelemente
BC327/BC328
PNP General PurposeTransistor
-500
-400
-300
IBI=BI=B-IB=5-I.=B4-0I=.m4B-5.3=-mI0AB.3m5-A=.m02A-m.A52mA.0AmA
IB = - 1.5mA
-200
IB = - 1.0mA
PT = 600mW
IB = - 0.5mA
-100
IB = 0
-0
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
10
PULSE
VCE = - 2.0V
- 1.0V
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
-1000
-1000
-100
VCE = -1V
PULSE
-10
-1
-0.1
-0.4
-0.5 -0.6 -0.7 -0.8
VBE[V], BASE-EMITTER VOLTAGE
-0.9
Figure 5. Base-Emitter On Voltage
-20
-16
I
B
=
-
80μA
IB= -
70μA
IB= -
60μA
IB = - 50μA
-12 I B = - 40μA
-8 IB = - 30μA
P
T
=
600mW
IB = - 20μA
-4
IB = - 10μA
IB = 0
-10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. Static Characteristic
-10
IC = 10 IB
PULSE
-1 VCE(sat)
-0.1
VBE(sat)
-0.01
-0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
VCE = -5.0V
100
10
-1
-10 -100
IC[mA], COLLECTOR CURRENT
Figure 6. Gain Bandwidth Product
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3


Part Number BC328
Description PNP General PurposeTransistor
Maker SeCoS
Total Page 3 Pages
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