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BC857S - PNP Silicon Multi-Chip Transistor

Key Features

  • s Power dissipation PCM : 0.3 W (Tamp. = 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Marking : 3C E 1 B1 C2.

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Full PDF Text Transcription for BC857S (Reference)

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Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : -...

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Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.

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