BL817M device consists of an infrared Emitting diode, which is optically coupled to a phototransistor detector.
It is packaged in a 4-pin DIP package.
Key Features
Current Transfer Ratio (CTR: 50%~600% @IF=5mA, VCE=5V) High Isolation Voltage Between Input and Output (Viso=5000V rms) Creepage Distance>7.62mm UL/CUL Approved.
Full PDF Text Transcription for BL817M (Reference)
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BL817M. For precise diagrams, and layout, please refer to the original PDF.
Elektronische Bauelemente BL817M 0.05A, 80V, 150mW High Density Mounting Type Photocoupler RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTI...
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liant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION BL817M device consists of an infrared Emitting diode, which is optically coupled to a phototransistor detector. It is packaged in a 4-pin DIP package. DIP4M FEATURES Current Transfer Ratio (CTR: 50%~600% @IF=5mA, VCE=5V) High Isolation Voltage Between Input and Output (Viso=5000V rms) Creepage Distance>7.62mm UL/CUL Approved APPLICATIONS Programmable Controllers System Appliances, Measuring Instruments Telecommunication Equipments Home Appliances, Such as Fan Heaters, etc. Signal Transmission Between Circuits of Different Potentials and Impedances MAR
BL817M Datasheet
