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D669A - NPN Transistor

Download the D669A datasheet PDF. This datasheet also covers the D669 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimens ions in Millimeters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (D669-SeCoS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
D669A 2SD669A Hitachi Semiconductor
D669A NPN Transistor UTC
D669A Silicon NPN Power Transistors SavantIC
D669 2SD669 Hitachi Semiconductor
D669 BIPOLAR POWER TRANSISTOR UTC

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
D669 NPN Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.