| Part Number | D669A Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power ampl. r-emitter breakdown voltage 2SD669 2SD669A IC=10mA; RBE=B V(BR)CBO Collector-base breakdown voltage 2SD669 2SD669A IC=1m A ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA VBE Base-emitter on voltage IC=150mA ; VCE=5V . |
D669A Datasheet and Specifications PDF
The D669A is a Silicon NPN Power Transistors.
| Part Number | D669A Datasheet |
|---|---|
| Description | 2SD669A |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2S.
* * * 140 14 Max * * * 10 200 * 1 1.5 * * V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 . |
| Part Number | D669A Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Unisonic Technologies |
| Overview | UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDER. 2SD669xG-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Green Package (6) Collector-Emitter Voltage (1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube (2) refer to Pin Assignment (3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23 (2) T60: TO-126, T6C: TO-126C, T6S: TO-126S (2) TM3: . |
| Part Number | D669A Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview | 2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES Power dissipation PCM : 1m. Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2. |