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KSD471A Datasheet Preview

KSD471A Datasheet

NPN Silicon General Purpose Transistor

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Elektronische Bauelemente
KSD471A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
z Complement to KSB564A
z Collector Current : IC = 1A
z Collector Dissipation : PC = 800mW
4 . 5 5 ±0. 2
TO-92
3 . 5 ±0. 2
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.8 W
Tj Junction Temperature
150
Tstg Storage Temperature
-55-150
0 . 4 6 ±0. 1
0 . 4 3 +…00.0.087
(1.27 T yp.)
12 3
1 . 2 5 ±0. 2
2 . 5 4 ±0. 1
1: E mitter
2: Base
3: C ollector
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
40
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=10mA, IB=0
IE=100μA, IC=0
30
5
Collector cut-off current
ICBO
VCB=30V, IE=0
DC current gain
hFE VCE=1V, IC=100mA
70
Collector-emitter saturation voltage
VCE(sat) IC=1A, IB=0.1A
Base-emitter saturation voltage
VBE(sat) IC=1A, IB=0.1A
Output Capacitance
Cob VCB=6V, IE=0,f=1MHZ
Transition frequency
fT VCE=6V, IC=10mA
TYP MAX UNIT
V
V
V
0.1 μA
400
0.5 V
1.2 V
16 pF
130 MHz
CLASSIFICATION OF hFE
Rank
Range
O
70-140
Y
120-240
G
200-400
http://www.SeCoSGmbH.com/
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2




SeCoS

KSD471A Datasheet Preview

KSD471A Datasheet

NPN Silicon General Purpose Transistor

No Preview Available !

Elektronische Bauelemente
Characteristics Curve
KSD471A
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of2


Part Number KSD471A
Description NPN Silicon General Purpose Transistor
Maker SeCoS
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